Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies

Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes
with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results
are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this
paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can
be deduced from the simulations.